Semiconductor device including dielectric layer

ABSTRACT

A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application based on pending application Ser. No.16/142,637, which in turn is a divisional application based onapplication Ser. No. 15/484,339, filed Apr. 11, 2017, now U.S. Pat. No.10,090,323 B2 issued Oct. 2, 2018, the entire contents of both beinghereby incorporated by reference.

Korean Patent Application No. 10-2016-0132750 filed on Oct. 13, 2016 inthe Korean Intellectual Property Office, and entitled: “SemiconductorDevice Including Dielectric Layer,” is incorporated by reference hereinin its entirety.

BACKGROUND 1. Field

The present disclosure relates to a semiconductor device including adielectric layer and a method of manufacturing the same.

2. Description of the Related Art

In order to improve the integration of semiconductor devices, NAND flashdevices, including word lines arranged in a direction perpendicular toan upper surface of a substrate, and dielectric layers and channellayers disposed in holes passing through the word lines, have beendeveloped.

SUMMARY

According to an aspect of the present disclosure, a semiconductor deviceis provided. The semiconductor device includes a stack structuredisposed on a substrate. The stack structure includes interlayerinsulating layers and first gate electrodes alternately stacked on eachother. A semiconductor layer is disposed in an opening penetratingthrough the interlayer insulating layers and the first gate electrodes.A first dielectric layer is interposed between the semiconductor layerand the stack structure. A lower pattern is disposed to be closer to thesubstrate than to the first gate electrodes. The lower pattern includesa first surface facing the first dielectric layer, and a second surfacefacing the stack structure while forming an acute angle with the firstsurface. The first dielectric layer includes a first portion facing thestack structure, and a second portion facing the first surface of thelower pattern and having a thickness greater than a thickness of thefirst portion.

According to an aspect of the present disclosure, a semiconductor deviceis provided. The semiconductor device includes a stack structuredisposed on a substrate. The stack structure includes interlayerinsulating layers and word lines alternately stacked on each other. Asemiconductor layer penetrating through the word lines and theinterlayer insulating layers is provided. A first dielectric layerincluding a first portion interposed between the semiconductor layer andthe stack structure, and a second portion bent from the first portionand having a thickness greater than a thickness of the first portion isprovided. A lower pattern disposed to be closer to the substrate than tothe word lines, while being located on the substrate, is provided.

According to an aspect of the present disclosure, a semiconductor deviceis provided. The semiconductor device includes a stack structuredisposed on a substrate. The stack structure includes interlayerinsulating layers and word lines alternately stacked on each other. Ahole penetrating through the stack structure is provided. A verticalstructure is disposed in the hole. The vertical structure includes asemiconductor layer disposed in the hole, a first dielectric layerbetween the semiconductor layer and the stack structure, and a padcontacting an upper region of the semiconductor layer. A lower patternis disposed to be closer to the substrate than to the word lines. Thefirst dielectric layer includes a first portion facing the stackstructure, and a second portion facing the lower pattern and having athickness greater than a thickness of the first portion.

According to an aspect of the present disclosure, a semiconductor deviceis provided. The semiconductor device includes a stack structure on asubstrate, the stack structure including interlayer insulating layersand first gate electrodes alternately stacked on each other, asemiconductor layer in an opening penetrating through the stackstructure, a first dielectric layer between the semiconductor layer andthe stack structure, the first dielectric layer including a firstportion along a sidewall of the stack structure, and a second portionbent from the first portion and having a thickness greater than athickness of the first portion, and a lower pattern in the opening andin contact with a bottom of the second portion of the first dielectriclayer.

BRIEF DESCRIPTION OF DRAWINGS

Features will become apparent to those of ordinary skill in the art bydescribing in detail exemplary embodiments with reference to theattached drawings, in which:

FIG. 1 illustrates a perspective view of a semiconductor deviceaccording to an example embodiment;

FIG. 2 illustrates a partially enlarged view of a modified example ofthe semiconductor device of FIG. 1 according to an example embodiment;

FIGS. 3A to 3C and FIG. 4 illustrate partially enlarged views of portion“C” of FIG. 1 to illustrate modifications of a semiconductor deviceaccording to an example embodiment;

FIG. 5A illustrates a cross-sectional view of an example of asemiconductor device according to an example embodiment;

FIG. 5B illustrates a cross-sectional view of a modified example of thesemiconductor device according to an example embodiment;

FIG. 6 illustrates a perspective view of a semiconductor deviceaccording to another example embodiment;

FIG. 7A illustrates a cross-sectional view of an example of thesemiconductor device according to another example embodiment;

FIG. 7B illustrates a cross-sectional view of a modified example of thesemiconductor device according to another example embodiment;

FIG. 8 illustrates a cross-sectional view of a semiconductor deviceaccording to another example embodiment;

FIG. 9A illustrates a cross-sectional view of an example of asemiconductor device according to another example embodiment;

FIG. 9B illustrates a cross-sectional view of a modified example of asemiconductor device according to another example embodiment;

FIGS. 10A to 10I illustrate cross-sectional views of stages in a methodof manufacturing a semiconductor device according to an exampleembodiment;

FIGS. 11A and 11B illustrate cross-sectional views of stages in a methodof manufacturing a semiconductor device according to another exampleembodiment;

FIGS. 12A to 12C illustrate cross-sectional views of stages in a methodof manufacturing a semiconductor device according to another exampleembodiment;

FIG. 13 illustrates a cross-sectional view of a stage in a method ofmanufacturing a semiconductor device according to another exampleembodiment;

FIGS. 14A to 14K illustrate views of stages in a method of manufacturinga semiconductor device according to another example embodiment; and

FIGS. 15A to 15C illustrate cross-sectional views of stages in a methodof manufacturing a semiconductor device according to another exampleembodiment.

DETAILED DESCRIPTION

FIG. 1 is a perspective view of a semiconductor device 1 according to anexample embodiment. Portions “A” and “B” in FIG. 1 are enlarged planviews illustrating portions of an opening 15 and a vertical structure 51in the perspective view of FIG. 1.

Referring to FIG. 1, the semiconductor device 1 according to an exampleembodiment may include a substrate 3, a stack structure 72 on thesubstrate 3, the opening 15 penetrating through the stack structure 72,the vertical structure 51 in the opening 15, and a lower pattern 18 incontact with at least a portion of the vertical structure 51.

The substrate 3 may be a semiconductor substrate formed of asemiconductor material, e.g., silicon or the like. The stack structure72 may include interlayer insulating layers 6 and gate electrodes 69alternately stacked on the substrate 3. The gate electrodes 69 may beformed of a metal nitride, e.g., TiN, and/or a metal, e.g., tungsten(W). The interlayer insulating layers 6 may be formed of, e.g., asilicon oxide.

The gate electrodes 69 may include first gate electrodes 69 w, a secondgate electrode 69 g below the first gate electrodes 69 w, and a thirdgate electrode 69 s on the first gate electrodes 69 w. The gateelectrodes 69 may be gate electrodes of a nonvolatile memory device,e.g., a NAND flash memory device. For example, the second gate electrode69 g may be a ground selection gate electrode, the third gate electrode69 s may be a string selection gate electrode, and the first gateelectrodes 69 w between the second and third gate electrodes 69 g and 69s may include word lines. For convenience of description, indescriptions provided below, the first gate electrodes 69 w are referredto as word lines 69 w, the second gate electrode 69 g is referred to asa ground selection gate electrode 69 g, and the third gate electrode 69s is referred to as a string selection gate electrode 69 s.

The interlayer insulating layers 6 may include a lowermost interlayerinsulating layer 6L and an uppermost interlayer insulating layer 6U. Thelowest interlayer insulating layer 6L may be interposed between theground selection gate electrode 69 g and the substrate 3. The uppermostinterlayer insulating layer 6U may cover the string selection gateelectrode 69 s.

In example embodiments, an interlayer insulating layer interposedbetween a lowermost word line 69 w among the word lines 69 w and theground selection gate electrode 69 g, among the interlayer insulatinglayers 6, may be referred to as a lower interlayer insulating layer 6 a.The lower interlayer insulating layer 6 a may have a thickness greaterthan a thickness of each of the interlayer insulating layers 6interposed between the word lines 69 w.

The opening 15 may penetrate through the stack structure 72 to allow aportion of the substrate 3 to be exposed. The opening 15 may extend intothe substrate 3 while penetrating through the stack structure 72.

The lower pattern 18 may be disposed in the opening 15. The verticalstructure 51 on the lower pattern 18 and the lower pattern 18 may fillthe opening 15. The opening 15 may be a hole. The lower pattern 18 maybe in contact with the portion of the substrate 3 exposed by the opening15. The lower pattern 18 may be disposed to be lower than positions ofthe word lines 69 w. The lower pattern 18 may be disposed to be closerto the substrate 3 than the word lines 69 w. The lower pattern 18 mayhave a side facing the ground selection gate electrode 69 g. The lowerpattern 18 may be formed of a semiconductor material or a siliconmaterial. The lower pattern 18 may be formed of an epitaxial materiallayer grown from the substrate 3 exposed by the opening 15. Theepitaxial material layer may include a monocrystalline silicon material.

The vertical structure 51 may be formed on the lower pattern 18 in theopening 15. The vertical structure 51 may include a core pattern 45, apad 48, a semiconductor layer 42, and a dielectric structure 33. Thecore pattern 45, the semiconductor layer 42 and the dielectric structure33 may penetrate through the word lines 69 w and through the interlayerinsulating layers 6 between the word lines 69 w. The pad 48 may bedisposed to be higher than the string selection gate electrode 69 s,e.g., the pad 48 may be on the top of the core pattern 45. Thesemiconductor layer 42 may cover a side surface and a bottom surface ofthe core pattern 45. The core pattern 45 and the semiconductor layer 42may penetrate through the string selection gate electrode 69 s and theword lines 69 w. The semiconductor layer 42 may face the string selectgate electrode 69 s and the word lines 69 w. The semiconductor layer 42may be referred to as a channel layer.

The semiconductor layer 42 may be configured of a silicon layer. Thecore pattern 45 may be formed of an insulating material, e.g., siliconoxide or the like. The pad 48 may be disposed on the core pattern 45.The semiconductor layer 42 may extend onto a side of the pad 48. The pad48 may be formed of, e.g., doped polysilicon. For example, the pad 48may be formed of an N-type conductivity polysilicon. The pad 48 may be adrain of a transistor.

The dielectric structure 33 may be interposed between the semiconductorlayer 42 and the stack structure 72. The dielectric structure 33 mayinclude a first dielectric layer 26, a second dielectric layer 28, and athird dielectric layer 30. The second dielectric layer 28 may beinterposed between the first dielectric layer 26 and the thirddielectric layer 30. The third dielectric layer 30 may be interposedbetween the second dielectric layer 28 and the semiconductor layer 42.

The third dielectric layer 30 may be a tunnel dielectric. The thirddielectric layer 30 may include, e.g., a silicon oxide and/or anitrogen-doped silicon oxide. The second dielectric layer 28 may be alayer storing information therein in a non-volatile memory device, e.g.,in a flash memory device or the like. For example, the second dielectriclayer 28 may be formed of e.g., a silicon nitride, capable of trappingand retaining electrons injected from the semiconductor layer 42 throughthe third dielectric layer 30, or of removing the trapped electronswithin the second dielectric layer 28, depending on operating conditionsof the non-volatile memory device, e.g., a flash memory device or thelike. The first dielectric layer 26 may be formed of, e.g., a siliconoxide. Alternatively, the first dielectric layer 26 may be formed of asilicon oxide containing an impurity, e.g., carbon (C), boron (B),phosphorus (P), or the like.

The stack structure 72 may further include fourth dielectric layers 66.The fourth dielectric layers 66 may be interposed between the gateelectrodes 69 and the interlayer insulating layers 6 to cover sides ofthe gate electrodes 69 facing the holes 15. The fourth dielectric layers66 may be formed of a high dielectric material, e.g., AlO or the like.The fourth dielectric layers 66 may form a blocking dielectric layer,together with the first dielectric layer 26.

The semiconductor device 1 according to an example embodiment mayfurther include an oxide layer 63 interposed between the groundselection gate electrode 69 g and the lower pattern 18 (FIG. 3A). Theoxide layer 63 may be in contact with the lower pattern 18.

The semiconductor device 1 according to an example embodiment mayfurther include a separation pattern 81, a spacer 75, and an impurityregion 78. The separation pattern 81 penetrating through the stackstructure 72 may be formed. The spacer 75 may be interposed between theseparation pattern 81 and the stack structure 72. The separation pattern81 may be formed of a conductive material, e.g., tungsten (W). Thespacer 75 may be formed of an insulating material, e.g., a siliconoxide, a silicon nitride and/or the like. The impurity region 78 may bedisposed in the substrate 3 to be located below the separation pattern81. The impurity region 78 may have N-type conductivity. The impurityregion 78 may be a common source region.

The semiconductor device 1 according to an example embodiment mayfurther include a contact plug 87 on the vertical structure 51, and abit line 90 on the contact plug 87. The contact plug 87 may beelectrically connected to the pad 48. The contact plug 87 and the bitline 90 may be formed of a conductive metal. The bit line 90 may bedisposed to be higher than a position of the separation pattern 81 andmay be spaced apart from the separation pattern 81.

The opening 15 may include a first hole region 15 a and a second holeregion 15 b. The first hole region 15 a may be located on, e.g., above,the second hole region 15 b, e.g., the first and second hole regions 15a and 15 b may be vertically above each other and in fluid communicationwith each other to define a single opening through an entire stack 72.The first hole region 15 a may be relatively close to the third gateelectrode 69 s, i.e., to the string selection gate electrode, and thesecond hole region 15 b may be relatively close to the second gateelectrode 69 g, i.e., to the ground selection gate electrode. In otherwords, as illustrated in FIG. 1, the first hole region 15 a (e.g., thetop dashed line across the opening 15 in FIG. 1) may be higher than thesecond hole region 15 b (e.g., the bottom dashed line across the opening15 in FIG. 1) relatively to the substrate 3.

As illustrated in the enlarged portions of FIG. 1, the first hole region15 a may have a shape closer to a circular shape than a shape of thesecond hole region 15 b thereto. For example, a portion of the opening15 that is close to the string selection gate electrode 69 s e.g., closeto the top of the stack 72, may have a substantially and uniformlyrounded, e.g., circular, shape in a top view.

As further illustrated in the enlarged portions of FIG. 1, the secondhole region 15 b may have a shape of a deformed or distorted circularshape. For example, a portion of the opening 15 that is close to theground selection gate electrode 69 g, e.g., close to the bottom of thestack 72, may have an irregularly curved shape, e.g., a distorted ordeformed circular shape in a top view. For example, the second holeregion 15 b may have a shape including both a concave portion and aconvex portion when viewed in a top view. For example, the second holeregion 15 b may have a deformed or distorted circular cross-sectionalshape including repeated concave and convex portions, and the like.

In an example embodiment, as illustrated in FIG. 1, the first dielectriclayer 26 formed in the distorted second hole region 15 b may be formedto have a uniform width, as viewed in a top view. However, exampleembodiments of the present disclosure are not limited thereto. Forexample, the first dielectric layer 26 in the second hole region 15 bmay be formed to have a non-uniform width. A modified example of thefirst dielectric layer 26 in the second hole region 15 b will bedescribed with reference to FIG. 2.

Referring to FIG. 2, in a second hole region 15 b′, which is on the sameplane, i.e., at a same height relative to the substrate 3, the firstdielectric layer 26 may include first and second thickness portions d1and d2 having different widths along a radial direction. For example, asillustrated in FIG. 2, in the case of the first dielectric layer 26 on asame plane, the first thickness portion d1 may have a width greater thanthat of the second thickness portion d2. The first thickness portion d1may be formed in a concave region of the second hole region 15 b′, andthe second thickness portion d2 may be formed in a convex region of thesecond hole region 15 b′. In this case, the convex region of the secondhole region 15 b′ (corresponds to the second thickness portion d2)refers to a portion of the sidewall of the second hole region 15 b′ thatbulges inwardly toward a center of the opening 15, and the concaveregion of the second hole region 15 b′ (corresponds to the firstthickness portion d1) refers to a portion of the sidewall of the secondhole region 15 b′ that extends outwardly away from the center of thesecond hole region 15 b′.

As illustrated in FIG. 2, the first dielectric layer 26 may be, e.g.,directly, on the sidewall of the second hole region 15 b, and may tracethe outline of the convex and concave portions of the second hole region15 b. The first dielectric layer 26 as described above may improvereliability of the semiconductor device. In addition, the firstdielectric layer 26 may improve cell distribution characteristics in thesemiconductor device.

Referring back to FIG. 1, the dielectric structure 33 may include bentportions. The dielectric structure 33 including the bent portions willbe described with reference to FIG. 3A. FIG. 3A is a partially enlargedview illustrating portion “C” of FIG. 1.

With reference to FIGS. 1 and 3A, the dielectric structure 33 mayinclude portions extending in a direction perpendicular to an uppersurface 3 a of the substrate 3 and portions extending in a directionparallel to the upper surface 3 a of the substrate 3. Ends of the bentportions of the dielectric structure 33 may contact the semiconductorlayer 42. The bent portions of the dielectric structure 33 may bedisposed to be higher than the ground selection gate electrode 69 gwhile being located below the word lines 69 w.

The first dielectric layer 26 may include a first portion 26 a and asecond portion 26 b. The first portion 26 a of the first dielectriclayer 26 may be a portion facing a side wall of the opening 15, and thesecond portion 26 b of the first dielectric layer 26 may be a portionfacing the lower pattern 18.

The first portion 26 a of the first dielectric layer 26 may have alinear form extending in a direction perpendicular to an upper surfaceof the substrate 3, and the second portion 26 b of the first dielectriclayer 26 may extend from the first portion 26 a in a direction parallelto the upper surface of the substrate 3. The second portion 26 b of thefirst dielectric layer 26 may be continuously formed from the firstportion 26 a.

The second portion 26 b of the first dielectric layer 26 may have athickness, e.g., along the y-axis, greater than a thickness of the firstportion 26 a, e.g., along the z-axis. A thickness of the second portion26 b may be increased as a distance, e.g., along the z axis, from a sidewall of the opening 15 increases. In an example, in the case of thefirst dielectric layer 26, the second portion 26 b may have a thicknessthat is about 1.5 or more times greater than that of the first portion26 a. For example, the thickness of the second portion 26 b may be about1.5 to about 5 times greater than that of the first portion 26 a, e.g.,the thickness of the second portion 26 b may be about 2 to about 5 timesgreater than that of the first portion 26 a or about 2 to about 3 timesgreater than that of the first portion 26 a.

The second portion 26 b of the first dielectric layer 26 may include afirst surface 26 s 1 and a second surface 26 s 2. The first surface 26 s1 of the second portion 26 b may be a bottom surface in contact with thelower pattern 18. The second surface 26 s 2 of the second portion 26 bmay be an upper surface thereof in contact with the second dielectriclayer 28. The second portion 26 b of the first dielectric layer 26 mayhave a third surface 26 s 3 in contact with the semiconductor layer 42.

The first surface 26 s 1 of the second portion 26 b of the firstdielectric layer 26 may form an obtuse angle with respect to the firstportion 26 a, i.e., relative to the y-axis. The second surface 26 s 2 ofthe second portion 26 b of the first dielectric layer 26 may form anacute angle with respect to the first portion 26 a, i.e., relative tothe y-axis. The second and third dielectric layers 28 and 30 may be bentto have acute angles on the second portion 26 b of the first dielectriclayer 26.

The lower pattern 18 may have a first surface 18 s 1 and a secondsurface 18 s 2. The first surface 18 s 1 of the lower pattern 18 may bein contact with the second portion 26 b of the first dielectric layer26. The second surface 18 s 2 of the lower pattern 18 may besubstantially perpendicular to the upper surface 3 a of the substrate 3a. The first surface 18 s 1 of the lower pattern 18 may be an uppersurface thereof, and the second surface 18 s 2 of the lower pattern 18may be a side surface thereof.

An angle (θ) between the second surface 18 s 2 of the lower pattern 18and the first surface 18 s 1 of the lower pattern 18 may be less than 90degrees. Thus, the second surface 18 s 2 of the lower pattern 18 mayform an acute angle with the first surface 18 s 1 of the lower pattern18.

The lower pattern 18 may include a recessed portion Ra recessed from acentral portion of an upper surface thereof. The recessed portion Ra ofthe lower pattern 18 may be in contact with the semiconductor layer 42.

In an example, the recessed portion Ra of the lower pattern 18 may bedownwardly concave from the upper surface of the lower pattern 18. Therecessed portion Ra of the lower pattern 18 may have a rounded shape ina vertical direction, but is not limited thereto. A modified example ofthe shape of the recessed portion Ra will be described with reference toFIG. 3B.

Referring to FIG. 3B, the lower pattern 18 may include a recessedportion Rb recessed downwardly from an upper surface thereof to have asigma shape, e.g., a partial diamond shape having one vertex at a lowestpoint of the recessed portion Rb and two additional vertices facing eachother and at a higher point than the lowest point. For example, therecessed portion Rb may have a form of which a width is graduallyincreased and then gradually reduced, in a direction from an upperportion to a lower portion thereof. The recessed portion Rb may bedisposed to be higher than the ground selection gate electrode 69 g, butis not limited thereto. A modified example of the recessed portion Rbwill be described with reference to FIG. 3C.

Referring to FIG. 3C, in the case of the lower pattern 18 including arecessed portion Rc recessed downwardly from an upper surface thereof tohave a sigma shape, a lowermost portion of the recessed portion Rc maybe located in a portion of the opening 15 penetrating through the groundselection gate electrode 69 g. The lowermost portion of the recessedportion Rc of the lower pattern 18 may be located on a level lower thanan upper surface of the ground selection gate electrode 69 g while beinghigher than a bottom surface of the ground selection gate electrode 69g.

In FIGS. 3A, 3B and 3C, the second portion 26 b of the first dielectriclayer 26 may have the third surface 26 s 3 in contact with thesemiconductor layer 42. The third surface 26 s 3 may be substantiallyperpendicular to the upper surface of the substrate 3. However, exampleembodiments of the present disclosure are not limited thereto. Amodified example of the third surface 26 s 3 will be described withreference to FIG. 4. Referring to FIG. 4, in the case of the secondportion 26 b of the first dielectric layer 26, a third surface 26 s 3′in contact with the semiconductor layer 18 may be concave. In an exampleembodiment, an upper surface 18 s 1′ of the lower pattern 18 may beconcave.

Referring to FIGS. 1 and 5A, examples of the dielectric structure 33will be described below.

Referring to FIG. 5A together with FIG. 1, in the case of the dielectricstructure 33, the first dielectric layer 26 may include a lower region26_2 and an upper region 26_1 on the lower region 26_2. In the firstdielectric layer 26, the lower region 26_2 and the upper region 26_1 mayface a sidewall of the hole 15.

In the case of the dielectric structure 33, a thickness t1 of the upperregion 26_1 of the first dielectric layer 26 may be equal to a thicknesst2 of the lower region 26_2 of the first dielectric layer 26, or may begreater than the thickness t2 of the lower region 26_2 of the firstdielectric layer 26. However, example embodiments of the presentdisclosure are not limited thereto. A modified example of the thicknessof the first dielectric layer 26 will be described with reference toFIG. 5B. Referring to FIG. 5B, a thickness t1 of the upper region 26_1of the first dielectric layer 26 may be less than a thickness t2′ of thelower region 26_2 of the first dielectric layer 26.

Next, a semiconductor device according to another example embodimentwill be described with reference to FIG. 6. FIG. 6 is a perspective viewof a semiconductor device according to another example embodiment.Portions “A” and “B” in FIG. 6 may be portions corresponding to portions“A” and “B” illustrated in FIG. 1, and are enlarged plan viewsillustrating portions of an opening 127 and a vertical structure 148.FIG. 7A is an enlarged cross-sectional view illustrating a portion ofthe perspective view of FIG. 6 to illustrate an example of constituentelements of a semiconductor device according to another exampleembodiment. FIG. 7B is an enlarged cross-sectional view illustrating aportion of the perspective view of FIG. 6 to illustrate a modifiedexample of constituent elements of a semiconductor device according toanother example embodiment.

Referring to FIGS. 6 and 7A, a semiconductor device 100 according toanother example embodiment may include first and second patterns 106 and109 interposed between a substrate 103 and a stack structure 178, and aconnection pattern 169.

The substrate 103 may be a semiconductor substrate formed of asemiconductor material, e.g., silicon or the like. The first patterns106 may be formed to have a column shape on the substrate 103. The firstpatterns 106 may be formed of an insulating material, e.g., a siliconoxide.

The second patterns 109 may cover the substrate 103 in the vicinity ofthe first patterns 106 while covering sidewalls of the first patterns106. The second patterns 109 may be formed of a semiconductor materialor a silicon material. For example, the second pattern 109 may be formedof impurity-doped polysilicon. For example, the second pattern 109 maybe formed of carbon-doped polysilicon. The connection pattern 169 may bedisposed on the second patterns 109, may fill a gap between the firstpatterns 106, and may cover the first and second patterns 106 and 109.The connection pattern 169 may be formed of a semiconductor material ora silicon material. For example, the connection pattern 169 may beformed of polysilicon.

The semiconductor device 100 according to the example embodiment mayinclude the stack structure 178 above the substrate 103, the openings127 penetrating through the stack structure 178, vertical structures 148in the openings 127, and a lower pattern 115 disposed below the stackstructure 178 while being disposed above the substrate 103.

The stack structure 178 may be disposed on the connection pattern 169.The stack structure 178 may include interlayer insulating layers 118 andgate electrodes 175 alternately stacked on each other. The gateelectrodes 175 may include first gate electrodes 175 w, a second gateelectrode 175 g below the first gate electrodes 175 w, and a third gateelectrode 175 s on the first gate electrodes 175 w. The first gateelectrodes 175 w may include word lines, the second gate electrode 175 gmay be a ground selection gate electrode, and the third gate electrode175 s may be a string selection gate electrode.

Each of the vertical structures 148 may include a core pattern 142, apad 145 on the core pattern 142, a semiconductor layer 139 coveringsidewalls and a bottom surface of the core pattern 142, and a dielectricstructure 136 between the semiconductor layer 139 and the stackstructure 178. The core pattern 142, the semiconductor layer 139, andthe dielectric structure 136 may penetrate through the gate electrodes175, and the interlayer insulating layers 118 between the gateelectrodes 175. The core pattern 142, the pad 145, the semiconductorlayer 139 and the dielectric structure 136 may be formed of the samematerial as the core pattern 45, the pad 48, the semiconductor layer 42,and the dielectric structure 33 illustrated above with reference to FIG.1.

The openings 127 may include a plurality of holes. Each of the openings127 may include a first hole region 127 a and a second hole region 127b. The first hole region 127 a may be located on the second hole region127 b, and may have a shape closer to a circular shape than a shape ofthe second hole region 127 b thereto. The second hole region 127 b mayhave a shape including both a concave portion and a convex portion.

The semiconductor layer 139 in one of the openings 127 may extend belowthe stack structure 178 to be connected to the semiconductor layer 139in another opening adjacent thereto. As such, the semiconductor layerextending below the stack structure 178 may be referred to as asemiconductor connection layer 139 c. Thus, the semiconductor connectionlayer 139 c may be disposed below the stack structure 178, and mayconnect the semiconductor layers 139 within adjacent openings 12 to eachother. The semiconductor connection layer 139 c may be in contact withthe connection pattern 169. The connection pattern 169 may contact abottom surface of the semiconductor connection layer 139 c and a portionof the semiconductor connection layer 139 c.

The dielectric structure 136 may be disposed within the openings 127,and may extend between the semiconductor connection layer 139 c and thestack structure 178. The dielectric structure 136 may include a firstdielectric layer 130, a second dielectric layer 132, and a thirddielectric layer 134. The second dielectric layer 132 may be interposedbetween the first dielectric layer 130 and the third dielectric layer134. The third dielectric layer 134 may be interposed between the seconddielectric layer 132 and the semiconductor layer 139. The first to thirddielectric layers 130, 132 and 134 may be formed of the same material asthe first to third dielectric layers 26, 28 and 30 described above withreference to FIG. 1.

The stack structure 178 may further include fourth dielectric layers 173interposed between the gate electrodes 175 and the interlayer insulatinglayers 118 and extending between the hole 127 and the gate electrodes175.

The lower pattern 115 may be interposed between the stack structure 178and the connection pattern 169. The lower pattern 115 may be spacedapart from the semiconductor connection layer 139 c. The lower pattern115 may not overlap the openings 127 and the semiconductor connectionlayer 139 c. The lower pattern 115 may be formed of a semiconductormaterial or a silicon material. For example, the lower pattern 115 maybe formed of an impurity-doped polysilicon material. Further, forexample, the lower pattern 115 may be formed of a carbon-dopedpolysilicon material. The lower pattern 115 may include a first surface115 s 1 and a second surface 115 s 2. The second surface 115 s 2 of thelower pattern 115 may be parallel to an upper surface 3 a of thesubstrate 103. The first surface 115 s 1 of the lower pattern 115 mayhave a concave shape. The first surface 115 s 1 of the lower pattern 115may form an acute angle with respect to the second surface 115 s 2.

The dielectric structure 136 may extend between the stack structure 178and the semiconductor connection layer 139 c below the stack structure178. In addition, the dielectric structure 136 may extend between thesemiconductor connection layer 139 c and the lower pattern 115. Thefirst dielectric layer 130 may include a first portion 130 a extendingalong an inner side of the respective opening 127 to be extendedlyprovided below the stack structure 178, and a second portion 130 bextending between the lower pattern 115 and the semiconductor connectionlayer 139 c. The second portion 130 b of the first dielectric layer 130may have a thickness greater than that of the first portion 130 a of thefirst dielectric layer 130. The second portion 130 b of the firstdielectric layer 130 may contact a portion of the first surface 115 s 1of the lower pattern 115.

The connection pattern 169 may contact a portion of the first surface115 s 1 of the lower pattern 115, a portion of the semiconductorconnection layer 139 c, and the dielectric structure 136 between thefirst surface 115 s 1 of the lower pattern 115 and the semiconductorconnection layer 139 c.

The semiconductor device 100 according to the example embodiment mayfurther include a separation pattern 184 traversing the stack structure178 to penetrate through the stack structure 178, and an insulatingspacer 181 between the separation pattern 184 and the stack structures178. The separation pattern 184 may be disposed on the connectionpattern 169. The separation pattern 184 may be formed of a conductivematerial, such as a metal, e.g., tungsten (W) or the like, dopedpolysilicon, and/or the like. The lower pattern 115 may be disposedbelow the stack structure 178 adjacent to the separation pattern 184.

Further, the semiconductor device 100 according to the exampleembodiment may further include contact plugs 187 on the verticalstructures 148, and bit lines 190 on the contact plugs 187.

In an example embodiment, a thickness t1 of an upper region 130_1 of thefirst dielectric layer 130 in the opening 127 may be equal to athickness t2 of a lower region 130_2 of the first dielectric layer 130,or may be greater than the thickness t2 of the lower region 130_2 of thefirst dielectric layer 130. However, example embodiments of the presentdisclosure are not limited thereto. A modified example of the thicknessof the first dielectric layer 130 will be described with reference toFIG. 7B. Referring to FIG. 7B, a thickness t1 ‘ of the upper region130_1 of the first dielectric layer 130 may be less than a thickness t2’of the lower region 130_2 of the first dielectric layer 130.

Next, a semiconductor device according to another example embodimentwill be described with reference to FIG. 8. FIG. 8 is a cross-sectionalview of a semiconductor device according to another example embodiment.FIG. 9A is an enlarged cross-sectional view illustrating a portion ofthe cross-sectional view of FIG. 8 to illustrate an example ofconstituent elements of a semiconductor device according to anotherexample embodiment. FIG. 9B is an enlarged cross-sectional viewillustrating a portion of the cross-sectional view of FIG. 8 toillustrate a modified example of constituent elements of a semiconductordevice according to another example embodiment. Portions “A” and “B” inFIG. 9A are enlarged plan views illustrating portions of a hole 224 hand a vertical structure 248.

With reference to 8 and 9A, a semiconductor device 200 according toanother example embodiment may include a substrate 203, a lowerinsulating layer 206 on the substrate 203, and a lower pattern 209 onthe lower insulating layer 206.

The substrate 203 may be a semiconductor substrate. The lower pattern209 may include a first lower pattern 209 a and a second lower pattern209 b on the first lower pattern 209 a. The first and second lowerpatterns 209 a and 209 b may be formed of a semiconductor material or adoped silicon material. The lower pattern 209 may be a back gateelectrode or a pipe gate electrode.

The semiconductor device 200 according to the example embodiment mayinclude a stack structure 278, a first upper insulating layer 250, aseparation pattern 254, an opening 224, the vertical structures 248, anda connection portion 251.

The stack structure 278 may be disposed on the lower pattern 209. Thestack structure 278 may include interlayer insulating layers 215 andgate electrodes 275 stacked sequentially. The gate electrodes 275 may beinterposed between the interlayer insulating layers 215. The gateelectrodes 275 may include first gate electrodes 275 w and a second gateelectrode 275 s on the first gate electrodes 275 w. The second gateelectrode 275 s may be an uppermost gate electrode among the gateelectrodes 275, and may be referred to as a select gate electrode. Thefirst gate electrodes 275 w may include word lines.

The first upper insulating layer 250 may be disposed on the stackstructure 278. The separation pattern 254 may penetrate through thefirst upper insulating layer 250 and the stack structure 278. Theseparation pattern 254 may be formed of an insulating material such as asilicon oxide or the like.

The opening 224 may include hole regions 224 h penetrating through thestack structure 278 on two sides of the separation pattern 254, and aconnection opening 224 c extending from the hole regions 224 h into thelower pattern 209 below the separation pattern 254. Each of the holeregions 224 h may include a first hole region 224 h_1 and a second holeregion 224 h_2 below the first hole region 224 h_1. The first holeregion 224 h_1 may have a shape closer than a shape of the second holeregion 224 h_2 to a circular shape. The second hole region 224 h_2 mayhave the same shape as that of the second hole region 15 b (see FIG. 15b).

The vertical structures 248 may be disposed within the hole regions 224h, and the connection portion 251 may be disposed within the connectionopening 224 c. The vertical structures 248 disposed on two sides of theseparation pattern 254 may be connected to each other through theconnection portion 251. The connection portion 251 may be embedded inthe lower pattern 209 and may be continuously formed from lower regionsof the vertical structures 248.

Each of the vertical structures 278 may include a core pattern 242penetrating through the gate electrodes 275, and the interlayerinsulating layers 215 between the gate electrodes 275, a pad 245 on thecore pattern 242, a semiconductor layer 239 between the core pattern 242and the stack structure 278, and a dielectric structure 236 between thesemiconductor layer 239 and the stack structure 278. The connectionportion 251 may be formed by extending the core patterns 242, thesemiconductor layers 239, and the dielectric structures 236 of thevertical structures 278.

The dielectric structure 236 may include a first dielectric layer 230, asecond dielectric layer 232, and a third dielectric layer 234. Thesecond dielectric layer 232 may be interposed between the first andthird dielectric layers 230 and 234. The third dielectric layer 234 maybe interposed between the second dielectric layer 232 and thesemiconductor layer 239. The first to third dielectric layers 230, 232and 234 may be formed of the same material as the first to thirddielectric layers 26, 28 and 30 described above with reference toFIG. 1. The stack structure 278 may further include fourth dielectriclayers 273 interposed between the gate electrodes 275 and the interlayerinsulating layers 215 and extending between the vertical structures 248and the gate electrodes 275.

The dielectric structure 236 may be bent while forming an acute angle θ1at corners of the connection opening 224 c. A surface of the dielectricstructure 236 in contact with the semiconductor layer 239 may be bentwhile forming the acute angle 81.

The first dielectric layer 230 may include a first portion 230 a in thehole region 224 h penetrating through the stack structure 278, and asecond portion 230 b in the connection opening 224 c.

In the case of the first dielectric layer 230, the second portion 230 bmay be in contact with the lower pattern 209. In an example of the firstdielectric layer 230, the second portion 230 b may have a thickness 1.5or more times greater than that of the first portion 230 a. In detail,the thickness of the second portion 230 b may be about 1.5 to about 5times greater than that of the first portion 230 a. In an example of thefirst dielectric layer 230, a thickness of the second portion 230 b maybe about 2 to about 5 times greater than that of the first portion 230a. In an example of the first dielectric layer 230, a thickness of thesecond portion 230 b may be about 2 to 3 times greater than that of thefirst portion 230 a.

The second lower pattern 209 b of the lower pattern 209 may include afirst surface 209 s 1 and a second surface 209 s 2. The second surface209 s 2 of the second lower pattern 209 b may be parallel to a surface203 a of the substrate 203. The second surface 209 s 2 of the secondlower pattern 209 b may be in contact with the interlayer insulatinglayer 215 of the stack structure 278. The first surface 209 s 1 of thesecond lower pattern 209 b may be in contact with the second portion 230b of the first dielectric layer 230. The first surface 209 s 1 of thesecond lower pattern 209 b may form an acute angle θ2 with the secondsurface 209 s 2.

The semiconductor device 200 according to another example embodiment mayinclude a source contact plug 280, a source line 282, a second upperinsulating layer 284, a bit line contact plug 286, and a bit line 290.The source contact plug 280 may penetrate through the first upperinsulating layer 250 and be electrically connected to the pad 245 of oneof the vertical structures 248 on two sides of the separation pattern254. The source line 282 may be electrically connected to the sourcecontact plug 280.

The second upper insulating layer 284 may be disposed on the first upperinsulating layer 250 and the source line 282. The bit line contact plug286 may penetrate through the first and second upper insulating layers250 and 284 to be electrically connected to the other vertical structure248, not connected to the source contact plug 280, among the verticalstructures 248 on two sides of the separation pattern 254. The bit line290 may be electrically connected to the bit line contact plug 286.

Next, examples of a method of manufacturing a semiconductor deviceaccording to example embodiments will be described.

FIGS. 10A to 10I are cross-sectional views of one side of thesemiconductor device in the perspective view of FIG. 1 to illustratestages in a method of manufacturing the semiconductor device 1 accordingto the example embodiment. An example of a method of manufacturing thesemiconductor device 1 according to the example embodiment describedabove with reference to FIG. 1 will be described with reference to FIGS.10A to 10I. Portions “A” and “B” in FIG. 10A are plan views of anopening.

Referring to FIG. 10A the substrate 3 may be provided. The substrate 3may be a semiconductor substrate. A molded structure 12 may be formed onthe substrate 3. The molded structure 12 may include interlayerinsulating layers 6 and sacrificial gate layers 9 alternately stacked oneach other. In the case of the molded structure 12, a lowermost layerand an uppermost layer may be interlayer insulating layers.

The interlayer insulating layers 6 may be sequentially arranged in adirection perpendicular to an upper surface of the substrate 3 and maybe spaced apart from each other. The sacrificial gate layers 9 may berespectively interposed between the interlayer insulating layers 6. Theinterlayer insulating layers 6 may be formed of, e.g., a silicon oxide.The sacrificial gate layers 9 may be formed of, e.g., a silicon nitride.

An opening 15 may be formed to penetrate through the molded structure 12and to extend into the substrate 3, to allow the substrate 3 to beexposed. For example, due to a high aspect ratio of the opening 15, ashape of a bottom portion of the opening 15 may be irregularly formed tobe distorted relative to a top portion of the opening 15, e.g.,sidewalls of the bottom portion of the opening 15 may not be circular asthe top portion but may be uneven to have irregularly arranged convexand concave portions along its perimeter. In detail, the opening 15 mayinclude the first hole region 15 a and the second hole region 15 b. Thefirst hole region 15 a may be located on the second hole region 15 b,e.g., the second hole region 15 b may be between the substrate 3 and thefirst hole region 15 a. The first hole region 15 a may have a shapecloser to a circular shape than a shape of the second hole region 15 bthereto. In other words, the first hole region 15 a may have asubstantially circular shape in a top view, while the second hole region15 b may have a shape including both a concave portion and a convexportion along its perimeter in a top view. For example, the second holeregion 15 b may have a distorted circular cross-sectional shapeincluding curved portions, e.g., series of ridges, or concave-convexportions in which concave portions and convex portions are repeatedlyformed, e.g., along a curve.

A lower pattern 18 filling a lower region of the opening 15 may beformed. The lower pattern 18 may be an epitaxial material layer formedusing a selective epitaxial growth (SEG) process on the substrate 3. Thelower pattern 18 may be formed of a semiconductor material grown fromthe substrate 3 exposed by the opening 15, e.g., formed ofmonocrystalline silicon.

A source layer 21, a conformal layer, may be formed above the substrate3 having the lower pattern 18, e.g., the source layer 21 may be formedconfromally on the molded structure 12 to have a uniform thickness andto trace the profiles of the sidewalls and bottom of each opening 15.The source layer 21 may be formed of a material different from theinterlayer insulating layers 6 and the sacrificial gate layers 9 of themolded structure 12. For example, the interlayer insulating layers 6 maybe formed of a silicon oxide, the sacrificial gate layers 9 may beformed of a silicon nitride, and the source layer 21 may be formed of asemiconductor material. In an example, the source layer 21 may be formedas a silicon layer. In an example, the source layer 21 may be formed asa silicon layer containing an impurity. The impurity may be, e.g.,carbon (C), boron (B), or phosphorus (P).

Referring to FIG. 10B, a first dielectric layer 26 may be formed byperforming an oxidation process (24). The oxidation process (24) may bedirected toward the molded structure 12 covered by the source layer 21to completely oxidize the source layer 21 without oxidizing the moldedstructure 12.

In detail, the oxidation process (24) may include application of anoxidation gas to the source layer 21, such that the oxidation process(24) oxidizes the entirety of the source layer 21 without substantiallyoxidizing the molded structure 12. For example, the oxidation process(24) may last for a sufficient time to oxidize the entirety of thesource layer 21, e.g., including portions of the source layer 21 on allthe concave and convex portions in the second hole region 15 b and aportion of the lower pattern 18, without substantially oxidizing themolded structure 12. For example, the resultant oxidized source layer 21with the oxidized upper portion of the lower pattern 18 may define thefirst dielectric layer 26. Thus, the first dielectric layer 26 may beformed to have a first thickness on the lower pattern 18, i.e., athickness of the oxidized source layer 21 and the upper portion of thelower pattern 18, and to have a second thickness less than the firstthickness on a sidewall of the opening 15, i.e., a thickness of theoxidized source layer 21. For example, if the oxidation process (24)were not to last for a sufficient time to oxidize the entire sourcelayer 21, portions of the source layer 21 in the second hole region 15 bwould have remained un-oxidized due to lower oxidation rate, therebycausing non-uniform thickness.

The oxidation process (24) may be an oxidation process in which anoxygen radical is not used, e.g., to provide sufficient oxidation timefor the entirety of the source layer 21 to oxidize without oxidizing themolded structure 12. That is, in order to substantially prevent themolded structure 12 from being oxidized, hydrogen (H₂) gas forming an O*radical may not be supplied, or an amount of supplied hydrogen (H₂) gasmay be significantly reduced, in the oxidation process (24). As sourcegas used for the oxidation process (24), O₂ may be used, H₂O may beused, O₂ and H₂O may be used, or O₂ and HCL may be used. The oxidationprocess (24) may be performed at a temperature of about 600° C. to about850° C.

Referring to FIG. 10C, a second dielectric layer 28, a third dielectriclayer 30, and a sacrificial spacer layer 36 may be sequentially, e.g.,and conformally, formed on the first dielectric layer 26. Since thematerial types of the first to third dielectric layers 26, 28 and 30have been described above with reference to FIG. 1, a detaileddescription thereof will be omitted. The sacrificial spacer layer 36 maybe formed of polysilicon.

Referring to FIG. 10D, the sacrificial spacer layer 36 and the first tothird dielectric layers 26, 28, and 30 may be anisotropically etched toallow the lower patterns 18 to be exposed. The sacrificial spacer layer36 may be etched to be formed as sacrificial spacers 36 a, and the firstto third dielectric layers 26, 28 and 30 may be etched to be configuredas a dielectric structure 33.

Referring to FIG. 10E, the lower pattern 18 may be etched to form arecessed region R recessed from an upper surface of the exposed lowerpattern 18. The sacrificial spacer 36 a may be removed. The recessedregion R may be formed to have a shape corresponding to one of therecessed shapes Ra, Rb, and Rc described above with reference to FIGS.3A 3B and 3C.

With reference to FIG. 10F, the semiconductor layer 42 may be formed onthe lower pattern 18 having the recessed region Rb, and the core pattern45 partially filling the opening 15 may be formed on the semiconductorlayer 42. The pad 48 filling a remaining portion of the opening 15 maybe formed on the core pattern 45. The dielectric structure 33, the corepattern 45, the semiconductor layer 42, and the pad 48 may configure,e.g., define, the vertical structure 51.

Referring to FIG. 10G, an upper insulating layer 54 may be formed on themolded structure 12. A separation opening 57 penetrating through theupper insulating layer 54 and the molded structure 12 to thus allow thesubstrate 3 to be exposed may be formed. The sacrificial gate layers 9(see FIG. 10F) exposed by the separation opening 57 may be removed toform empty spaces 60 between the interlayer insulating layers 6. Anoxide layer 63 may be formed on sidewalls of the lower pattern 18exposed by the empty spaces 60.

Referring to FIG. 10H the fourth gate dielectric layers 66 and the gateelectrodes 69 filling the empty spaces 60 (see FIG. 10G) may be formed.Thus, the stack structure 72 as described in FIG. 1 may be formed.

Referring to FIG. 10I, the insulating spacer 75 may be formed onsidewalls of the separation opening 57. The impurity region 78 may beformed in the substrate 3, to be provided below the separation opening57. The separation pattern 81 filling the separation opening 57 may beformed.

Subsequently, a process of forming the contact plugs 87 and the bitlines 90, as illustrated in FIG. 1, may be performed. Thus, thesemiconductor device 1 as described with reference to FIG. 1 may beformed.

FIGS. 11A and 11B are cross-sectional views of one side of thesemiconductor device in the perspective view of FIG. 1 to illustrateanother example of a method of manufacturing the semiconductor device 1according to example embodiments.

Referring to FIG. 11A, a substrate, such as a resultantly providedsubstrate, as described above with reference to FIGS. 10A to 10C, may beprepared. Next, the first dielectric layer 26 may be exposed, by etchingthe second and third dielectric layers 28 and 30 while anisotropicallyetching the sacrificial spacer layer 36 (see FIG. 10C). The sacrificialspacer layer 36 (see FIG. 10C) may be etched to be formed as sacrificialspacers 36 a. In other words, as compared to FIG. 10D, the firstdielectric layer 26 is only partially etched, so the lower pattern 18 isnot exposed.

Next, referring to FIG. 11B, the exposed first dielectric layer 26 maybe isotropically etched to expose the lower pattern 18. Thus, theisotropic etching causes an exposed surface of the first dielectriclayer 26 to be concave, i.e., as the shape of the third surface 26 s 3′of the first dielectric layer 26 described above with reference to FIG.4. Then, the sacrificial spacers 36 a may be removed. Next, thesemiconductor device may be formed by performing processes as describedabove with reference to FIGS. 10F to 10I.

FIGS. 12A to 12C are cross-sectional views of one side of thesemiconductor device in the perspective view of FIG. 1 to illustrateanother example of a method of manufacturing the semiconductor device 1according to example embodiments.

Referring to FIG. 12A, the molded structure 12 (see FIG. 10A) may beformed on the substrate 3 as described above with reference to FIG. 10A,the opening 15 (FIG. 10A) penetrating through the molded structure 12(FIG. 10A) may be formed, and the lower pattern 18 (FIG. 10A) may beformed in a lower region of the opening 15 (FIG. 10A). A source layer21′, being relatively thick, may be conformally formed above thesubstrate having the lower pattern 18. The source layer 21′ may have athickness greater than that of the source layer 21 described above withreference to FIG. 10A, and may be formed of the same material as thesource layer 21 (FIG. 10A).

Referring to FIG. 12B, a surface of the source layer 21′ in the upperportion of the opening 15 may be partially etched, such that a thicknessof a resultant source layer 21 a′ in the upper portion of the opening 15may be lower than that in the lower portion of the opening 15. That is,the source layer 21 a′ may have a thickness L2 in a lower region if theopening 15 and a thickness L1 in an upper region of the opening 15, withthe thickness L2 being greater than the thickness L1. The surface of thesource layer 21′ (FIG. 12A) may be etched by using an etching processusing chlorine (Cl₂) gas.

Referring to FIG. 12C, the source layer 21 a′ in FIG. 12B, of which thelower region has the thickness L2 greater than the thickness L1 of theupper region thereof, may be oxidized using the oxidation process (24)as described above with reference to FIG. 10B. A portion of the lowerpattern 18 may also be oxidized while the entirety of the source layer21 a′ (FIG. 12B) is oxidized. As the entirety of the source layer 21 a′(FIG. 12B) is oxidized, a first dielectric layer 26, of which athickness t2′ of a lower region is greater than a thickness t1′ of anupper region thereof, may be formed. The first dielectric layer 26 maybe formed as the first dielectric layer 26 described above withreference to FIG. 5B. Then, a semiconductor device may be formed byperforming the same process as described with reference to FIGS. 10C to10I.

FIG. 13 is a cross-sectional view of one side of the semiconductordevice in the perspective view of FIG. 1 to illustrate another exampleof a method of manufacturing the semiconductor device 1 according toexample embodiments.

Referring to FIG. 13, a substrate, such as a resultantly providedsubstrate, as described above with reference to FIG. 12A, may beprepared. An oxidation process (22) may be performed to oxidize asurface of the source layer 21′ having a relatively great thickness,described above with reference to FIG. 12A and to thus form asacrificial oxide layer 23, thereby forming a source layer 21 a′ havinga reduced thickness. The source layer 21 a′ having a reduced thicknessmay have the same shape as that of the source layer 21 a′ describedabove with reference to FIG. 12B. Thus, in the case of the source layer21 a′ having a reduced thickness, a thickness L2 of a lower regionthereof may be greater than a thickness L1 of an upper region thereof.

The sacrificial oxide layer 23 may be selectively removed. Thus,substantially the same resultant structure as described above withreference to FIG. 12B may be formed. Next, as described with referenceto FIG. 12C, after the source layer 21 a′ (see FIG. 12C) is oxidized,the semiconductor device may be formed by performing the process asillustrated in FIGS. 10C to 10I.

FIGS. 14A to 14K are drawings illustrating an example of a method ofmanufacturing the semiconductor device 100 according to exampleembodiments. FIGS. 14A to 14D, FIG. 14F, FIG. 14G, and FIGS. 141 to 14Kare perspective views illustrating an example of a method ofmanufacturing the semiconductor device 100 according to the exampleembodiments. FIGS. 14E and 14H are cross-sectional views illustrating anexample of a method of manufacturing the semiconductor device 100according to the example embodiments. Portions “A” and “B” in FIG. 14Care plan views of an opening.

Referring to FIG. 14A, he first patterns 106 may be formed on thesubstrate 103 to be spaced apart from each other. The substrate 103 maybe a semiconductor substrate. The first patterns 106 may be formed onthe substrate 103 to have a pillar shape, and may be formed of aninsulating material, e.g., a silicon oxide. A second layer and asacrificial layer may be formed on the substrate including the firstpatterns 106, and a planarization process may be performed thereon untilthe first patterns 106 are exposed. Thus, the second pattern 109 may beformed to cover sidewalls of the first patterns 106 and the substratebetween the first patterns 106. The sacrificial pattern 112 may beformed on the second pattern 109 to fill space between the firstpatterns 106. The second pattern 109 may be formed of a semiconductormaterial or a silicon material. The second pattern 109 may be formed ofcarbon doped polysilicon. The sacrificial pattern 112 may be formed of,e.g., a silicon nitride.

With reference to FIG. 14B, a lower layer 114 may be formed on thesubstrate including the first and second patterns 106 and 109 and thesacrificial pattern 112. The lower layer 114 may be formed of asemiconductor material or a silicon material. For example, the lowerlayer 114 may be formed of carbon-doped polysilicon.

A molded structure 124 may be formed on the lower layer 114. The moldedstructure 124 may include the interlayer insulating layers 118 andsacrificial gate layers 121 alternately stacked on each other. In thecase of the molded structure 124, a lowermost layer and an uppermostlayer may be interlayer insulating layers.

Referring to FIG. 14C, holes 127 h may be formed to penetrate throughthe molded structure 124 and allow the lower layer 114 (see FIG. 14B) tobe exposed. The lower layer 114 (see FIG. 14B) exposed by the holes 127h may be etched to form the lower pattern 115 and a lower opening 127 cconnected to the holes 127 h. The holes 127 h and the lower opening 127c may be referred to as the opening 127. The opening 127 may include thefirst and second hole regions 127 a and 127 b corresponding to the firstand second hole regions 15 a and 15 b illustrated in FIG. 10A.

Referring to FIGS. 14D and 14E, the first dielectric layer 130, thesecond dielectric layer 132, the third dielectric layer 134, and thesemiconductor layer 139 may be sequentially formed on the substratehaving the opening 127. The core pattern 142 filling the opening 127 maybe formed on the semiconductor layer 139. The core pattern 142 may thenbe recessed, and the pad 145 may be formed thereon. Then, aplanarization process may be performed thereon until an uppermostinterlayer insulating layer 118 of the molded structure 124 is exposed.The first to third dielectric layers 130, 132 and 134 may configure thedielectric structure 136.

The dielectric structure 136, the semiconductor layer 139, the corepattern 142 and the pad 145 disposed in the holes 127 h of the opening127 may be referred to as vertical structures 148. The dielectricstructure 136, the semiconductor layer 139, and the core pattern 142disposed in the connection opening 127 c may be referred to as aconnection structure 151.

The first dielectric layer 130 may be formed using one of the methods offorming the first dielectric layer 26 described above with reference toFIGS. 10A to 13. For example, a process of forming the first dielectriclayer 130 may be identical to the process of forming the sacrificiallayer 21 (see FIG. 10A) and forming the first dielectric layer 26 (seeFIG. 10B) by performing the oxidation process (24, see FIG. 10B) ofoxidizing the sacrificial layer 21 (FIG. 10A), as described in FIGS. 10Aand 10B.

The first dielectric layer 130 may include an oxidized portion formed byoxidizing a portion of the lower pattern 115. Thus, a portion of thefirst dielectric layer 130, contacting the lower pattern 115, may have athickness greater than a thickness of a portion thereof facing sidewallsof the holes 127 h. In addition, in the case of the lower pattern 115, asurface of a portion thereof in contact with the first dielectric layer130 may be concave.

Referring to FIG. 14F, an upper insulating layer 154 covering the moldedstructure 124 and the vertical structures 148 may be formed. Aseparation opening 157 penetrating through the upper insulating layer154 and the molded structure 124 while allowing the lower pattern 115 tobe exposed may be formed. A protective spacer 160 may be formed on asidewall of the separation opening 157.

Referring to FIG. 14G, the sacrificial pattern 112 (see FIG. 14F) may beexposed by etching the lower pattern 115. Subsequently, empty spaces 166may be formed by removing the sacrificial pattern 112 (see FIG. 14F).Thus, the empty spaces 166 may allow the dielectric structure 136 of theconnection structure 151 to be exposed.

Referring to FIG. 14H, the dielectric structure 136 exposed by the emptyspaces 166 and located below a semiconductor connection layer 139 c maybe etched and removed. Thus, the empty spaces 166 may be extended toallow a lower surface of the semiconductor connection layer 139 c and aportion of a side of the semiconductor connection layer 139 c to beexposed.

Referring to FIG. 14I, a connecting material layer 168 may be formed onthe substrate including the extended empty spaces 166 (FIG. 14H). Theconnecting material layer 168 may contact the semiconductor connectionlayer 139 c and the lower pattern 115 while filling the extended emptyspaces 166 (see FIG. 14H). The connecting material layer 168 may beformed of a semiconductor material or a silicon material.

Referring to FIG. 14J, a connection pattern 169 may be formed bypartially etching the connecting material layer 168 to a level of alower portion of the separation opening 157. Next, a sidewall of themolded structure 124 (see FIG. 14I) may be exposed by removing theprotective spacer 160 (see FIG. 14I). Subsequently, a gate formingprocess substantially the same as described above with reference toFIGS. 10G and 10H may be performed. For example, empty spaces may beformed by removing the sacrificial gate layers 121 of the moldedstructure 124 (FIG. 14I), and within the empty spaces, fourth dielectriclayers 173 conformally covering inner walls of the empty spaces and gateelectrodes 175 filling the empty spaces may be formed as described abovewith reference to FIG. 10H.

Referring to FIG. 14K, an insulating spacer 181 may be formed on asidewall of the separation opening 157, and a separation pattern 184 maybe formed to fill the separation opening 157. Subsequently, a process offorming the contact plugs 187 and the bit lines 190 as described abovewith reference to FIG. 6 may be performed. Thus, the semiconductordevice 100 as described above with reference to FIG. 6 may be formed.

FIGS. 15A to 15C are cross-sectional views illustrating an example of amethod of manufacturing the semiconductor device 200 according to theexample embodiments.

Referring to FIG. 15A, a lower insulating layer 206 may be formed on asubstrate 203. A lower pattern 209 including a sacrificial pattern 210embedded therein may be formed on the lower insulating layer 206. Thelower pattern 209 may include a first lower pattern 209 a, thesacrificial pattern 210 provided inside the first lower pattern 209 a,and a second lower pattern 209 b covering the first lower pattern 209 aand the sacrificial pattern 210. The lower pattern 209 may be formed ofa semiconductor material or doped polysilicon. The sacrificial pattern210 may be formed of a material having etch selectivity with respect tothe lower pattern 209. A molded structure 221 may be formed on the lowerpattern 209. The molded structure 221 may include sacrificial gatelayers 215 and interlayer insulating layers 218 alternately stacked oneach other.

Referring to FIG. 15B, holes 224 h penetrating through the moldedstructure 221 to allow the sacrificial pattern 210 (see FIG. 15A) to beexposed may be formed. Then, the sacrificial pattern 210 (FIG. 15A)exposed by the holes 224 h may be removed to form a connection opening224 c. The holes 224 h and the connection opening 224 c may be referredto as an opening 224. The holes 224 h of the opening 224 may includefirst and second hole regions 224 a and 224 b corresponding to the firstand second hole regions 15 a and 15 b described above with reference toFIG. 10A.

Referring to FIG. 15C, a first dielectric layer 230, a second dielectriclayer 232, a third dielectric layer 234, and a semiconductor layer 239may be sequentially formed on a substrate having the opening 224. A corepattern 242 filling the opening 224 may be formed on the semiconductorlayer 239. The core pattern 242 may then be recessed, and a pad 245 maybe formed thereon. Then, a planarization process may be performedthereon until an uppermost interlayer insulating layer 218 of the moldedstructure 221 (see FIG. 15B) is exposed. The first to third dielectriclayers 230, 232 and 234 may configure a dielectric structure 236.

The dielectric structure 236, the semiconductor layer 239, the corepattern 242 and the pad 245 disposed in the holes 224 h of the opening224 may be referred to as vertical structures 248. The dielectricstructure 236, the semiconductor layer 239, and the core pattern 242disposed in the connection opening 224 c may be referred to as aconnection structure 251.

The first dielectric layer 230 may be formed using one of the methods offorming the first dielectric layer 26 described above with reference toFIGS. 10A to 13. For example, a process of forming the first dielectriclayer 230 may be identical to the process of forming the sacrificiallayer 21 (see FIG. 10A) and forming the first dielectric layer 26 (seeFIG. 10B) by performing the oxidation process (24, see FIG. 10B) ofoxidizing the sacrificial layer 21 (FIG. 10A), as described in FIGS. 10Aand 10B. The first dielectric layer 230 may include an oxidized portionformed by oxidizing a portion of the lower pattern 209. Thus, a portionof the first dielectric layer 230, contacting the lower pattern 209, mayhave a thickness greater than a thickness of a portion thereof facingsidewalls of the holes 224 h. Thus, the lower pattern 209 and the firstdielectric layer 230 as described above with reference to FIGS. 8 and 9Amay be formed.

A first upper insulating layer 250 covering the molded structure 221(see FIG. 15B) and the vertical structures 248 may be formed. Aseparation opening 252 penetrating through the first upper insulatinglayer 250 and the molded structure 221 (see FIG. 15B) may be formed.

Subsequently, a gate forming process substantially the same as describedabove with reference to FIGS. 10G and 10H may be performed. For example,empty spaces may be formed by removing the sacrificial gate layers 215of the molded structure 221 (FIG. 15B), and within the empty spaces,fourth dielectric layers 273 conformally covering inner walls of theempty spaces and gate electrodes 275 filling the empty spaces may beformed as described above with reference to FIG. 10H.

Referring again to FIG. 8, a source contact plug 280 penetrating throughthe first upper insulating layer 250 and electrically connected to thepad 245 of one of the vertical structures 248, and a source line 282electrically connected to the source contact plug 280 may be formed. Asecond upper insulating layer 284 covering the source line 282 and thefirst upper insulating layer 250 may be formed. A bit line contact plug286 penetrating through the first and second upper insulating layers 250and 284 to be electrically connected to the other vertical structure248, not connected to the source contact plug 280, among the verticalstructures 248 on two sides of the separation pattern 254 may be formed,and a bit line 290 electrically connected to the bit line contact plug286 may be formed.

According to example embodiments, a method of forming a semiconductordevice includes forming a dielectric layer by forming an oxide layer ona bottom and an inner wall of a hole having a lower portion with adistorted circular shape, such that the oxide layer has a requiredthickness in both concave and convex regions of the distorted circularshape. That is, a, e.g., silicon, source layer is formed on the bottomand inner wall of the hole, followed by an oxidation process (withoutoxygen radicals) completely oxidizing the source layer, e.g., to ensureproper oxidation and thickness in both concave/convex portions in thebottom of the hole, without oxidizing a molded structure underneath thesilicon source layer (due to lack of oxygen radicals). As such, theresultant oxidized layer defines a dielectric layer in the hole regionwith improved reliability and improve cell distribution characteristicsin semiconductor devices. Further, as set forth above, a semiconductordevice including a reliable dielectric layer with improved celldistribution characteristics may be provided.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

1.-30. (canceled)
 31. A semiconductor device, comprising: a stackstructure on a substrate, the stack structure including interlayerinsulating layers and gate layers alternately stacked on each other; alower pattern on the substrate; and a vertical structure on the lowerpattern, wherein the vertical structure and the lower pattern penetratethrough the stack structure, wherein the interlayer insulating layersinclude a first interlayer insulating layer on the substrate, a secondinterlayer insulating layer on the first interlayer insulating layer anda third interlayer insulating layer on the second interlayer insulatinglayer, wherein a thickness of the second interlayer insulating layer isgreater than a thickness of each of the first and third interlayerinsulating layers, wherein the gate layers include a first gate layerbetween the first interlayer insulating layer and the second interlayerinsulating layer, and a second gate layer between the second interlayerinsulating layer and the third interlayer insulating layer, wherein thevertical structure includes a core pattern, a channel layer anddielectric structure, wherein a portion of the channel layer is betweenthe core pattern and the dielectric structure, wherein the dielectricstructure is between the channel layer and the stack structure, whereinthe core pattern includes a first core portion, a second core portion onthe first core portion, and a third core portion on the second coreportion, wherein the first core portion includes a first side surfacehaving a first slope, wherein the second core portion includes a secondside surface having a second slope different from the first slope,wherein the third core portion includes a third side surface having athird slope different from the second slope, wherein the second coreportion is higher than a level of the first gate electrode and is lowerthan a level of the second gate electrode, wherein the channel layerincludes a first channel portion adjacent to the first core portion, asecond channel portion adjacent to the second core portion, a thirdchannel portion adjacent to the third core portion, and a lower channelportion contacting the lower pattern, wherein the dielectric structureincludes a first layer, a second layer and a third layer, wherein thethird layer is between the channel layer and the second layer, whereinthe first layer includes a first portion between the lower pattern andthe second layer, and wherein at least a portion of the first channelportion is between the first core portion and the first portion of thefirst layer.
 32. The semiconductor device of claim 31, wherein the firstportion of the first layer includes a side surface contacting the firstchannel portion of the channel layer, a bottom surface contacting thelower pattern and an upper surface contacting the second layer.
 33. Thesemiconductor device of claim 31, wherein each of the first and thirdside surfaces of the core pattern extends from the second side surfaceof the core pattern.
 34. The semiconductor device of claim 33, whereineach of the first slope and third slope is steeper than the second slopeagainst to an upper surface of the substrate.
 35. The semiconductordevice of claim 31, wherein the first side surface does not overlap withthe third side surface in a vertical direction, and wherein the verticaldirection is perpendicular to an upper surface of the substrate.
 36. Thesemiconductor device of claim 31, wherein a portion between the secondside surface and the third side surface is higher than a level of alower end of the third layer.
 37. The semiconductor device of claim 31,wherein the first portion of the first layer includes a first thicknessportion having a first thickness and a second thickness portion having asecond thickness greater than the first thickness in a verticaldirection, and wherein the vertical direction is perpendicular to anupper surface of the substrate.
 38. The semiconductor device of claim37, wherein the first thickness portion of the first portion is betweenthe second thickness portion of the first portion and the secondinterlayer insulating layer.
 39. The semiconductor device of claim 31,wherein the lower pattern includes a recessed portion recessed from anupper portion of the lower pattern, the recessed portion being incontact with the lower channel portion of the channel layer.
 40. Thesemiconductor device of claim 31, wherein the second layer includes afirst linear portion facing the stack structure and a second linearportion contacting the first portion of the first layer, wherein thesecond linear portion is bent from the first linear portion, and whereinthe second linear portion is between the first portion of the firstlayer and the third layer.
 41. The semiconductor device of claim 31,wherein the first layer further includes a second portion between thesecond layer and the second gate layer, wherein a maximum thickness in avertical direction of the first portion is greater than a thickness in ahorizontal direction of the second portion, wherein the verticaldirection is perpendicular to an upper surface of the substrate, andwherein the horizontal direction is parallel to the upper surface of thesubstrate.
 42. The semiconductor device of claim 31, wherein the firstlayer includes a first dielectric layer, wherein the second layerincludes an information storing layer, wherein the third layer includesa second dielectric layer, wherein the lower pattern includes a firstsilicon layer, and wherein the channel layer includes a second siliconlayer.
 43. A semiconductor device, comprising: a stack structure on asubstrate, the stack structure including interlayer insulating layersand gate layers alternately stacked on each other; a lower pattern onthe substrate; and a vertical structure on the lower pattern, whereinthe vertical structure and the lower pattern penetrate through the stackstructure, wherein the interlayer insulating layers include a firstinterlayer insulating layer on the substrate, a second interlayerinsulating layer on the first interlayer insulating layer and a thirdinterlayer insulating layer on the second interlayer insulating layer,wherein a thickness of the second interlayer insulating layer is greaterthan a thickness of each of the first and third interlayer insulatinglayers, wherein the gate layers include a first gate layer between thefirst interlayer insulating layer and the second interlayer insulatinglayer, and a second gate layer between the second interlayer insulatinglayer and the third interlayer insulating layer, wherein the verticalstructure includes a core pattern, a channel layer and dielectricstructure, wherein a portion of the channel layer is between the corepattern and the dielectric structure, wherein the dielectric structureis between the channel layer and the stack structure, wherein the corepattern includes a first core portion, a second core portion on thefirst core portion, and a third core portion on the second core portion,wherein a maximum width of the third core portion is greater than amaximum width of the first core portion, in a horizontal directionparallel to an upper surface of the substrate, wherein the second coreportion is higher than a level of the first gate electrode and is lowerthan a level of the second gate electrode, wherein the channel layerincludes a first channel portion adjacent to the first core portion, asecond channel portion adjacent to the second core portion, a thirdchannel portion adjacent to the third core portion, and a lower channelportion contacting the lower pattern, wherein the dielectric structureincludes a first layer, a second layer and a third layer, wherein thethird layer is between the channel layer and the second layer, whereinthe first layer includes a first portion between the lower pattern andthe second layer, wherein a maximum thickness of the first portion in avertical direction is greater than a thickness of the lower channelportion contacting a lower end of the core pattern.
 44. Thesemiconductor device of claim 43, wherein the first core portionincludes a first side surface having a first slope, wherein the secondcore portion includes a second side surface having a second slopedifferent from the first slope, wherein the third core portion includesa third side surface having a third slope different from the secondslope, wherein the second core portion is higher than a level of thefirst gate electrode and is lower than a level of the second gateelectrode, and wherein each of the first slope and third slope issteeper than the second slope against to the upper surface of thesubstrate.
 45. The semiconductor device of claim 43, wherein a maximumthickness of the first portion is greater than a sum of a thickness of aportion of the second layer facing the second gate layer and a thicknessof a portion of the third layer facing the second gate layer.
 46. Thesemiconductor device of claim 43, wherein the first layer includes afirst dielectric layer, wherein the second layer includes an informationstoring layer, wherein the third layer includes a second dielectriclayer, wherein the lower pattern includes a first silicon layer, andwherein the channel layer includes a second silicon layer.
 47. Thesemiconductor device of claim 43, wherein the first portion of the firstlayer includes a first thickness portion having a first thickness and asecond thickness portion having a second thickness greater than thefirst thickness in the vertical direction, and wherein the firstthickness portion of the first portion is between the second thicknessportion of the first portion and the second interlayer insulating layer.48. A semiconductor device, comprising: a stack structure on asubstrate, the stack structure including interlayer insulating layersand gate layers alternately stacked on each other; a lower pattern onthe substrate; and a vertical structure on the lower pattern, whereinthe vertical structure and the lower pattern penetrate through the stackstructure, wherein the interlayer insulating layers include a firstinterlayer insulating layer on the substrate, a second interlayerinsulating layer on the first interlayer insulating layer and a thirdinterlayer insulating layer on the second interlayer insulating layer,wherein a thickness of the second interlayer insulating layer is greaterthan a thickness of each of the first and third interlayer insulatinglayers, wherein the gate layers include a first gate layer between thefirst interlayer insulating layer and the second interlayer insulatinglayer, and a second gate layer between the second interlayer insulatinglayer and the third interlayer insulating layer, wherein the verticalstructure includes a core pattern, a channel layer and dielectricstructure, wherein a portion of the channel layer is between the corepattern and the dielectric structure, wherein the dielectric structureis between the channel layer and the stack structure, wherein the corepattern includes a first core portion, a second core portion on thefirst core portion, and a third core portion on the second core portion,wherein a maximum width of the third core portion is greater than amaximum width of the first core portion, in a horizontal directionparallel to an upper surface of the substrate, wherein the second coreportion is higher than a level of the first gate electrode and is lowerthan a level of the second gate electrode, wherein the channel layerincludes a first channel portion adjacent to the first core portion, asecond channel portion adjacent to the second core portion, a thirdchannel portion adjacent to the third core portion, and a lower channelportion contacting the lower pattern, wherein the dielectric structureincludes a first layer, a second layer and a third layer, wherein thethird layer is between the channel layer and the second layer, whereinthe first layer includes a first portion between the lower pattern andthe second layer, and wherein a maximum thickness of the first portionof the first layer in a vertical direction is about 2 times or more asthick as a thickness of a portion of the third layer facing the secondgate layer in a horizontal direction.
 49. The semiconductor device ofclaim 48, wherein the first core portion includes a first side surfacehaving a first slope, wherein the second core portion includes a secondside surface having a second slope different from the first slope,wherein the third core portion includes a third side surface having athird slope different from the second slope, wherein the second coreportion is higher than a level of the first gate electrode and is lowerthan a level of the second gate electrode, and wherein each of the firstslope and third slope is steeper than the second slope against to theupper surface of the substrate.
 50. The semiconductor device of claim48, wherein the maximum thickness of the first portion is greater than asum of a thickness of a portion of the second layer facing the secondgate layer and a thickness of a portion of the third layer facing thesecond gate layer, wherein the first layer includes a first dielectriclayer, wherein the second layer includes an information storing layer,wherein the third layer includes a second dielectric layer, wherein thelower pattern includes a first silicon layer, and wherein the channellayer includes a second silicon layer.